A finite difference scheme for two-dimensional semiconductor device of heat conduction on composite triangular grids (Q422893): Difference between revisions

The paper is concerned with the bipolar energy balance model for semiconductors. It consists of four nonlinear PDEs in a bounded domain represented by two balance equations for the electron and holes densities, the balance equations for the temperature and the Poisson equation for the electrostatic potential. A finite volume method is used to devise finite difference schemes on triangular cell-centered grids with local refinement in the case of Dirichlet boundary conditions. The scheme is based on a modified upwind approximation and linear interpolation in space at the interface. An analysis of the proposed scheme is performed obtaining an error estimate in the energy norm. The paper is completed with a numerical example of a reduced version of the original problem.