Positivity preserving discretization of time dependent semiconductor drift-diffusion equations (Q450888): Difference between revisions

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Property / review text
 
In this paper a numerical algorithm for semiconductor drift-diffusion equations is constructed provided that the positivity of the particle densities is kept (the so-called positivity preserving discretization). The paper is interesting but numerical results for a one-dimensional \(pn\)-diode are in some sense not illustrative. On the other hand, the reviewer supposes that while calculating stationary regimes for drift-diffusion equations with the use of stabilization methods, the so-called methods without saturation are preferable since they take into account the smoothness of the sought stationary solution whereas the method in the paper is not able to do that.
Property / review text: In this paper a numerical algorithm for semiconductor drift-diffusion equations is constructed provided that the positivity of the particle densities is kept (the so-called positivity preserving discretization). The paper is interesting but numerical results for a one-dimensional \(pn\)-diode are in some sense not illustrative. On the other hand, the reviewer supposes that while calculating stationary regimes for drift-diffusion equations with the use of stabilization methods, the so-called methods without saturation are preferable since they take into account the smoothness of the sought stationary solution whereas the method in the paper is not able to do that. / rank
 
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Property / Mathematics Subject Classification ID
 
Property / Mathematics Subject Classification ID: 82D37 / rank
 
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Property / Mathematics Subject Classification ID
 
Property / Mathematics Subject Classification ID: 65M60 / rank
 
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Property / Mathematics Subject Classification ID
 
Property / Mathematics Subject Classification ID: 82-08 / rank
 
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Property / Mathematics Subject Classification ID
 
Property / Mathematics Subject Classification ID: 65L60 / rank
 
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Property / zbMATH DE Number
 
Property / zbMATH DE Number: 6086860 / rank
 
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Property / zbMATH Keywords
 
drift-diffusion equations
Property / zbMATH Keywords: drift-diffusion equations / rank
 
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Property / zbMATH Keywords
 
semiconductor model
Property / zbMATH Keywords: semiconductor model / rank
 
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Property / zbMATH Keywords
 
positivity preservation
Property / zbMATH Keywords: positivity preservation / rank
 
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Property / zbMATH Keywords
 
mixed finite elements
Property / zbMATH Keywords: mixed finite elements / rank
 
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Property / zbMATH Keywords
 
splitting method
Property / zbMATH Keywords: splitting method / rank
 
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Property / full work available at URL: https://doi.org/10.1016/j.apnum.2012.06.016 / rank
 
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Property / OpenAlex ID: W2062911638 / rank
 
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Property / cites work
 
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Latest revision as of 18:02, 5 July 2024

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Positivity preserving discretization of time dependent semiconductor drift-diffusion equations
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    Positivity preserving discretization of time dependent semiconductor drift-diffusion equations (English)
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    26 September 2012
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    In this paper a numerical algorithm for semiconductor drift-diffusion equations is constructed provided that the positivity of the particle densities is kept (the so-called positivity preserving discretization). The paper is interesting but numerical results for a one-dimensional \(pn\)-diode are in some sense not illustrative. On the other hand, the reviewer supposes that while calculating stationary regimes for drift-diffusion equations with the use of stabilization methods, the so-called methods without saturation are preferable since they take into account the smoothness of the sought stationary solution whereas the method in the paper is not able to do that.
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    drift-diffusion equations
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    semiconductor model
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    positivity preservation
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    mixed finite elements
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    splitting method
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