External noise effects in doped semiconductors operating under sub-THz signals (Q1942963): Difference between revisions

@@ Property / author @@
-Bernardo Spagnolo
@@ Property / author: Bernardo Spagnolo / rank @@
-Normal rank
@@ Property / author @@
+Bernardo Spagnolo
@@ Property / author: Bernardo Spagnolo / rank @@
+Normal rank
@@ Property / MaRDI profile type @@
+MaRDI publication profile
@@ Property / MaRDI profile type: MaRDI publication profile / rank @@
+Normal rank
@@ Property / cites work @@
+Role of the initial conditions on the enhancement of the escape time in static and fluctuating potentials
+Normal rank
@@ links / mardi / name / links / mardi / name @@
+Publication:1942963