External noise effects in doped semiconductors operating under sub-THz signals

DOI10.1016/S0034-4877(12)60037-8MaRDI QIDQ1942963zbMATH OpenFDO

Authors Dominique Persano Adorno, Nicola Pizzolato, Davide Valenti, B. Spagnolo

Publication date 14 March 2013

Published in Reports on Mathematical Physics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/S0034-4877(12)60037-8

zbMATH Keywords

fluctuations and noise processesMonte Carlo simulationstransport properties

Mathematics Subject Classification ID

Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37) Statistical mechanics of nanostructures and nanoparticles (82D80)

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Cites work

• Role of the initial conditions on the enhancement of the escape time in static and fluctuating potentials

Cited in

(6)

• Charge-particles transport in semiconductors characterized by a generalized Langevin equation with a fractional noise
• Stochastic resonance in a fractional oscillator driven by multiplicative quadratic noise
• Modeling of sensory characteristics based on the growth of food spoilage bacteria
• Noise induced phenomena in the dynamics of two competing species
• Nonequilibrium electron spin relaxation in \(n\)-type doped gaas sample
• External noise effects in silicon MOS inversion layer

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