Nonequilibrium electron spin relaxation in n-type doped GaAs sample
From MaRDI portal
Publication:5131528
DOI10.1088/1742-5468/ab3411zbMath1457.82216OpenAlexW2977198676MaRDI QIDQ5131528
Nicola Pizzolato, S. Spezia, Bernardo Spagnolo, Adorno D. Persano
Publication date: 8 November 2020
Published in: Journal of Statistical Mechanics: Theory and Experiment (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1088/1742-5468/ab3411
Stochastic methods (Fokker-Planck, Langevin, etc.) applied to problems in time-dependent statistical mechanics (82C31) Quantum dynamics and nonequilibrium statistical mechanics (general) (82C10)
Related Items (2)
The amazing graphene: an educational bridge connecting different physics concepts ⋮ New trends in nonequilibrium statistical mechanics: classical and quantum systems
Cites Work
- Escape from a metastable state with fluctuating barrier
- Spatio-temporal patterns in population dynamics
- External noise effects in doped semiconductors operating under sub-THz signals
- On some properties of kinetic and hydrodynamic equations for inelastic interactions.
- Quantum dissipative dynamics of a bistable system in the sub-Ohmic to super-Ohmic regime
- A Collective Description of Electron Interactions: II. Collective<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>vs</mml:mi></mml:math>Individual Particle Aspects of the Interactions
- Theory of the Effect of Spin-Orbit Coupling on Magnetic Resonance in Some Semiconductors
- Spin-Orbit Coupling Effects in Zinc Blende Structures
This page was built for publication: Nonequilibrium electron spin relaxation in n-type doped GaAs sample
