Analysis on the initial-boundary value problem of a full bipolar hydrodynamic model for semiconductors (Q478659): Difference between revisions

@@ Property / author @@
-Hai-feng Hu
@@ Property / author: Hai-feng Hu / rank @@
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@@ Property / author @@
-Kai-Jun Zhang
@@ Property / author: Kai-Jun Zhang / rank @@
-Normal rank
@@ Property / author @@
+Hai-feng Hu
@@ Property / author: Hai-feng Hu / rank @@
+Normal rank
@@ Property / author @@
+Kai-Jun Zhang
@@ Property / author: Kai-Jun Zhang / rank @@
+Normal rank
@@ Property / MaRDI profile type @@
+MaRDI publication profile
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@@ Property / full work available at URL @@
+https://doi.org/10.3934/dcdsb.2014.19.1601
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@@ Property / OpenAlex ID @@
+W2330901554
@@ Property / OpenAlex ID: W2330901554 / rank @@
+Normal rank
@@ Property / cites work @@
+Global Existence and Relaxation Limit for Smooth Solutions to the Euler--Poisson Model for Semiconductors
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+On a one-dimensional steady-state hydrodynamic model for semiconductors
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+Asymptotic behavior of solutions to Euler-Poisson equations for bipolar hydrodynamic model of semiconductors
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+Stability of semiconductor states with insulating and contact boundary conditions
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+ASYMPTOTIC BEHAVIOR OF GLOBAL SMOOTH SOLUTIONS TO THE FULL 1D HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
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+On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors
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