A finite-volume scheme for a spinorial matrix drift-diffusion model for semiconductors (Q2808864): Difference between revisions

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+W2128553293
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+.05639
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+Diffusion models for spin transport derived from the spinor Boltzmann equation
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+Q3620703
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+Existence of Bounded Steady State Solutions to Spin-Polarized Drift-Diffusion Systems
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+Quantum drift-diffusion modeling of spin transport in nanostructures
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+Diffusion limit of a generalized matrix Boltzmann equation for spin-polarized transport
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+Bounded weak solutions to a matrix drift–diffusion model for spin-coherent electron transport in semiconductors
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+Spin-polarized transport in ferromagnetic multilayers: an unconditionally convergent FEM integrator
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+On the Discretization of van Roosbroeck's Equations with Magnetic Field
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+Asymptotic Behavior of the Scharfetter–Gummel Scheme for the Drift-Diffusion Model
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+Uniform exponential decay of the free energy for Voronoi finite volume discretized reaction-diffusion systems
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+Study of a Finite Volume Scheme for the Drift-Diffusion System. Asymptotic Behavior in the Quasi-Neutral Limit
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+An Adaptive Mixed Scheme for Energy-Transport Simulations of Field-Effect Transistors
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