A mixed-finite volume element coupled with the method of characteristic fractional step difference for simulating transient behavior of semiconductor device of heat conductor and its numerical analysis (Q1690583): Difference between revisions

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Property / author: Yi-Rang Yuan / rank
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Property / author: Chang-Feng Li / rank
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Property / author: Tong-jun Sun / rank
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Property / author: Yi-Rang Yuan / rank
 
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Property / author: Chang-Feng Li / rank
 
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Property / author: Tong-jun Sun / rank
 
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Property / full work available at URL: https://doi.org/10.1007/s10255-017-0721-y / rank
 
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Property / OpenAlex ID: W2769363392 / rank
 
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Latest revision as of 00:28, 15 July 2024

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A mixed-finite volume element coupled with the method of characteristic fractional step difference for simulating transient behavior of semiconductor device of heat conductor and its numerical analysis
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    A mixed-finite volume element coupled with the method of characteristic fractional step difference for simulating transient behavior of semiconductor device of heat conductor and its numerical analysis (English)
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    19 January 2018
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    transient behavior of three-dimensional semiconductor device
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    numerical simulation
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    mixed finite volume element
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    modified characteristic fractional step difference
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    second-order estimate in \(L^{2}\) norm
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