A full coupled drift-diffusion-Poisson simulation of a GFET (Q2208081): Difference between revisions

Usually, graphene field-effect transistors (GFETs) are investigated by adopting reduced 1D models of the Poisson equation with some averaging procedure. In this paper, a full 2D simulation is presented for a top-gated GFET including a full 2D Poisson equation and a drift-diffusion model with mobilities by a suitable discontinuous Galerkin (DG) method. The mobilities are deduced from the direct solution of the Boltzmann equations for charge transport in graphene by a DG method. An extensive numerical simulation is performed based on the semiclassical Boltzmann equations, including electron-phonon scatterings, electron-impurities scatterings, and scattering with the remote phonon of the substrate, taking into account both intra and inter-band scatterings. The numerical results confirm the main features of such a device for the limited range of gate-source voltages and for the current-offstate, which are noise-free and allow to determine in an accurate way the low field mobility.