Mixed layer problem and quasineutral limit of the bipolar drift-diffusion model with different mobilities (Q2165001): Difference between revisions

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+https://doi.org/10.1007/s00025-022-01711-7
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+On large time asymptotics for drift-diffusion-poisson systems
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+Global solutions of the time-dependent drift-diffusion semiconductor equations
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+The initial time layer problem and the quasineutral limit in a nonlinear drift diffusion model for semiconductors
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+Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors
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+The initial time layer problem and the quasineutral limit in the semiconductor drift-diffusion model
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+Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices
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+Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile
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+ASYMPTOTIC BEHAVIOR OF SOLUTIONS TO DRIFT-DIFFUSION SYSTEM WITH GENERALIZED DISSIPATION
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+Boundary layer analysis and quasi-neutral limits in the drift-diffusion equations
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+QUASINEUTRAL LIMIT OF THE DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS WITH GENERAL INITIAL DATA
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+Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions
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+Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile
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+The Mixed Layer Problem and Quasi-Neutral Limit of the Drift-Diffusion Model for Semiconductors
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+Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile
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+Asymptotic expansion of solutions to the drift-diffusion equation with large initial data
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+Publication:2165001