ON THE 3-D BIPOLAR ISENTROPIC EULER–POISSON MODEL FOR SEMICONDUCTORS AND THE DRIFT-DIFFUSION LIMIT (Q4798797): Difference between revisions

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Property / cites work: The relaxation to the drift-diffusion system for the 3-D isentropic Euler-Poisson model for semiconductors / rank
 
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Property / cites work: The one-dimensional Darcy's law as the limit of a compressible Euler flow / rank
 
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Property / cites work: Weak solutions to a hydrodynamic model for semiconductors and relaxation to the drift-diffusion equation / rank
 
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Property / cites work: Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors / rank
 
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Latest revision as of 09:28, 30 July 2024

scientific article; zbMATH DE number 1882711
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English
ON THE 3-D BIPOLAR ISENTROPIC EULER–POISSON MODEL FOR SEMICONDUCTORS AND THE DRIFT-DIFFUSION LIMIT
scientific article; zbMATH DE number 1882711

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    ON THE 3-D BIPOLAR ISENTROPIC EULER–POISSON MODEL FOR SEMICONDUCTORS AND THE DRIFT-DIFFUSION LIMIT (English)
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    16 March 2003
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    relaxation limit
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    3-D bipolar hydrodynamic model
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    semiconductors
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    convergence of weak solutions
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