ON THE 3-D BIPOLAR ISENTROPIC EULER–POISSON MODEL FOR SEMICONDUCTORS AND THE DRIFT-DIFFUSION LIMIT

DOI10.1142/S0218202500000215zbMath1012.82026MaRDI QIDQ4798797

Corrado Lattanzia

Publication date: 16 March 2003

Published in: Mathematical Models and Methods in Applied Sciences (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1142/s0218202500000215

zbMATH Keywords

semiconductors; relaxation limit; convergence of weak solutions; 3-D bipolar hydrodynamic model

Mathematics Subject Classification ID

35L70: Second-order nonlinear hyperbolic equations

82D37: Statistical mechanics of semiconductors

76X05: Ionized gas flow in electromagnetic fields; plasmic flow

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Cites Work

• The one-dimensional Darcy's law as the limit of a compressible Euler flow
• The relaxation to the drift-diffusion system for the 3-D isentropic Euler-Poisson model for semiconductors
• Weak solutions to a hydrodynamic model for semiconductors and relaxation to the drift-diffusion equation
• Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors