ON THE 3-D BIPOLAR ISENTROPIC EULER–POISSON MODEL FOR SEMICONDUCTORS AND THE DRIFT-DIFFUSION LIMIT (Q4798797): Difference between revisions
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| Property / cites work: The relaxation to the drift-diffusion system for the 3-D isentropic Euler-Poisson model for semiconductors / rank | |||
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| Property / cites work: The one-dimensional Darcy's law as the limit of a compressible Euler flow / rank | |||
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| Property / cites work: Weak solutions to a hydrodynamic model for semiconductors and relaxation to the drift-diffusion equation / rank | |||
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| Property / cites work: Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors / rank | |||
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| Property / full work available at URL: https://doi.org/10.1142/s0218202500000215 / rank | |||
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| Property / OpenAlex ID: W2051319897 / rank | |||
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Latest revision as of 08:28, 30 July 2024
scientific article; zbMATH DE number 1882711
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | ON THE 3-D BIPOLAR ISENTROPIC EULER–POISSON MODEL FOR SEMICONDUCTORS AND THE DRIFT-DIFFUSION LIMIT |
scientific article; zbMATH DE number 1882711 |
Statements
ON THE 3-D BIPOLAR ISENTROPIC EULER–POISSON MODEL FOR SEMICONDUCTORS AND THE DRIFT-DIFFUSION LIMIT (English)
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16 March 2003
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relaxation limit
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3-D bipolar hydrodynamic model
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semiconductors
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convergence of weak solutions
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