Mixed finite volume methods for semiconductor device simulation (Q4342160): Difference between revisions

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+Mixed finite volume methods for semiconductor device simulation
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+Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors
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+Global approximate Newton methods
@@ Property / cites work: Global approximate Newton methods / rank @@
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+Mixed and Hybrid Finite Element Methods
@@ Property / cites work: Mixed and Hybrid Finite Element Methods / rank @@
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+L\({}_{\infty}\) stability of finite element approximations to elliptic gradient equations
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+Some Error Estimates for the Box Method
@@ Property / cites work: Some Error Estimates for the Box Method / rank @@
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+Some upwinding techniques for finite element approximations of convection-diffusion equations
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+A new non-conforming Petrov-Galerkin finite-element method with triangular elements for a singularly perturbed advection-diffusion problem
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+Differencing scheme for a differential equation with a small parameter affecting the highest derivative
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+Generalized Finite Element Methods: Their Performance and Their Relation to Mixed Methods
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+Convergence of a second-order accurate Petrov-Galerkin scheme for convection-diffusion problems in semiconductors
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+Two-Dimensional Exponential Fitting and Applications to Drift-Diffusion Models
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+An analysis of the Scharfetter-Gummel box method for the stationary semiconductor device equations
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+https://doi.org/10.1002/(sici)1098-2426(199705)13:3<215::aid-num1>3.0.co;2-q
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+W2067906924
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+Mixed finite volume methods for semiconductor device simulation (English)
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