Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile (Q5470624): Difference between revisions
From MaRDI portal
Set profile property. |
Set OpenAlex properties. |
||
| (One intermediate revision by one other user not shown) | |||
| Property / full work available at URL | |||
| Property / full work available at URL: https://doi.org/10.1137/s0036141004440010 / rank | |||
Normal rank | |||
| Property / OpenAlex ID | |||
| Property / OpenAlex ID: W2080093058 / rank | |||
Normal rank | |||
| links / mardi / name | links / mardi / name | ||
Latest revision as of 08:54, 30 July 2024
scientific article; zbMATH DE number 5029400
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile |
scientific article; zbMATH DE number 5029400 |
Statements
Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile (English)
0 references
31 May 2006
0 references
quasi-neutral limit
0 references
drift diffusion equations
0 references
multiple scaling asymptotic expansions
0 references
singular perturbation
0 references
classical energy methods
0 references
\(\lambda\)-weighted Lyapunov-type functional
0 references
vanishing Debye length limit
0 references
one space dimension
0 references
initial and boundary layers
0 references
