A COMPARISON OF SOME METHODS FOR THE SOLUTION OF THE NONLINEAR POISSON EQUATION IN SEMICONDUCTOR DEVICE MODELLING (Q3777396): Difference between revisions
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| Property / DOI: 10.1108/eb010312 / rank | |||
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| Property / cites work: Global approximate Newton methods / rank | |||
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| Property / cites work: Q5652137 / rank | |||
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| Property / cites work: Parameter Selection for Newton-Like Methods Applicable to Nonlinear Partial Differential Equations / rank | |||
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Latest revision as of 18:58, 21 December 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | A COMPARISON OF SOME METHODS FOR THE SOLUTION OF THE NONLINEAR POISSON EQUATION IN SEMICONDUCTOR DEVICE MODELLING |
scientific article |
Statements
A COMPARISON OF SOME METHODS FOR THE SOLUTION OF THE NONLINEAR POISSON EQUATION IN SEMICONDUCTOR DEVICE MODELLING (English)
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1987
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semiconductor device
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Newton's method
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nonlinear Poisson equation
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metal oxide semiconductur field effect transistors
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