A COMPARISON OF SOME METHODS FOR THE SOLUTION OF THE NONLINEAR POISSON EQUATION IN SEMICONDUCTOR DEVICE MODELLING (Q3777396): Difference between revisions

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Property / cites work: Global approximate Newton methods / rank
 
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Property / cites work: Q5652137 / rank
 
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Property / cites work: Parameter Selection for Newton-Like Methods Applicable to Nonlinear Partial Differential Equations / rank
 
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Latest revision as of 18:58, 21 December 2024

scientific article
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A COMPARISON OF SOME METHODS FOR THE SOLUTION OF THE NONLINEAR POISSON EQUATION IN SEMICONDUCTOR DEVICE MODELLING
scientific article

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    A COMPARISON OF SOME METHODS FOR THE SOLUTION OF THE NONLINEAR POISSON EQUATION IN SEMICONDUCTOR DEVICE MODELLING (English)
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    1987
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    semiconductor device
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    Newton's method
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    nonlinear Poisson equation
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    metal oxide semiconductur field effect transistors
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