Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors (Q1604238): Difference between revisions

The authors study the quasi-neutral limit rigorously for a nonlinear drift diffusion model for semiconductors, when the doping profile is a constant or does not change sign, generalizing the previous results of nonlinear adiabatic diffusion. Here they employ multiplier techniques instead of the invariant region method, which allows them to obtain lower and upper bounds on the densities.