The bipolar hydrodynamic model for semiconductors and the drift-diffusion equations (Q1916782): Difference between revisions
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| Property / DOI: 10.1006/jmaa.1996.0081 / rank | |||
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| Property / reviewed by: Laura-Iulia Aniţa / rank | |||
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| Property / reviewed by: Laura-Iulia Aniţa / rank | |||
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| Property / MaRDI profile type: MaRDI publication profile / rank | |||
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| Property / full work available at URL: https://doi.org/10.1006/jmaa.1996.0081 / rank | |||
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| Property / OpenAlex ID: W2081712379 / rank | |||
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| Property / Wikidata QID: Q57777092 / rank | |||
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| Property / DOI: 10.1006/JMAA.1996.0081 / rank | |||
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Latest revision as of 12:47, 16 December 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | The bipolar hydrodynamic model for semiconductors and the drift-diffusion equations |
scientific article |
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The bipolar hydrodynamic model for semiconductors and the drift-diffusion equations (English)
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25 June 1998
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The author establishes the existence of weak entropy solutions for a bipolar hydrodynamic model for semiconductors, with uniform \(L^\infty\) and \(L^2\) bounds with respect to the relaxation time. It is proved that these solutions are the limits of a numerical approximation based on a modified version of the fractional step Lax-Friedrichs scheme.
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drift-diffusion equations
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bipolar hydrodynamic model for semiconductors
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fractional step Lax-Friedrichs scheme
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