Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver (Q3156132): Difference between revisions
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| Property / author | |||
| Property / author: Armando Majorana / rank | |||
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| Property / author: Cristina L. R. Milazzo / rank | |||
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| Property / MaRDI profile type: MaRDI publication profile / rank | |||
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| Property / full work available at URL: https://doi.org/10.1108/03321640410510578 / rank | |||
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| Property / OpenAlex ID: W2004954336 / rank | |||
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| Property / cites work: Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices / rank | |||
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| Property / cites work: A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices / rank | |||
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Latest revision as of 16:03, 7 June 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver |
scientific article |
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Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver (English)
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6 January 2005
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Electronic engineering
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Monte Carlo simulation
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Semiconductor devices
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Silicon
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