A new approach to numerical simulation of charge transport in double gate-MOSFET (Q2008027): Difference between revisions

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Property / author: Alexander Blokhin / rank
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Property / author: Boris Semisalov / rank
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Property / author: Alexander Blokhin / rank
 
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Property / author: Boris Semisalov / rank
 
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Property / full work available at URL: https://doi.org/10.1016/j.amc.2018.09.030 / rank
 
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Latest revision as of 02:29, 21 July 2024

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A new approach to numerical simulation of charge transport in double gate-MOSFET
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    A new approach to numerical simulation of charge transport in double gate-MOSFET (English)
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    22 November 2019
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    DG-MOSFET
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    hydrodynamical model
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    numerical simulations
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    pseudo-spectral method
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    algorithm without saturation
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    stabilization method
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