ACCURATE COMPUTATION OF ELECTRIC FIELD IN REVERSE‐BIASED SEMICONDUCTOR DEVICES: A MIXED FINITE‐ELEMENT APPROACH (Q3756468): Difference between revisions
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| Property / full work available at URL: https://doi.org/10.1108/eb009991 / rank | |||
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| Property / OpenAlex ID: W2006868701 / rank | |||
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| Property / cites work: Sur la régularité de la solution d'inéquations elliptiques / rank | |||
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| Property / cites work: Error estimates for the finite element solution of variational inequalities. Part I. primal theory / rank | |||
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| Property / cites work: Error estimates for the finite element solution of variational inequalities. Part II. Mixed methods / rank | |||
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| Property / cites work: Q3914338 / rank | |||
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Latest revision as of 19:01, 17 June 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | ACCURATE COMPUTATION OF ELECTRIC FIELD IN REVERSE‐BIASED SEMICONDUCTOR DEVICES: A MIXED FINITE‐ELEMENT APPROACH |
scientific article |
Statements
ACCURATE COMPUTATION OF ELECTRIC FIELD IN REVERSE‐BIASED SEMICONDUCTOR DEVICES: A MIXED FINITE‐ELEMENT APPROACH (English)
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1984
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finite element method
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free boundary problem
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reverse-biased semiconductor devices
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