Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile (Q2519323): Difference between revisions

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-Qiang Chang Ju
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+Qiang Chang Ju
@@ Property / author: Qiang Chang Ju / rank @@
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+MaRDI publication profile
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@@ Property / full work available at URL @@
+https://doi.org/10.1007/s11425-008-0039-6
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+W2087877346
@@ Property / OpenAlex ID: W2087877346 / rank @@
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@@ Property / cites work @@
+Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors
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@@ Property / cites work @@
+The initial time layer problem and the quasineutral limit in the semiconductor drift-diffusion model
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@@ Property / cites work @@
+Q2774111
@@ Property / cites work: Q2774111 / rank @@
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@@ Property / cites work @@
+QUASINEUTRAL LIMIT OF THE DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS WITH GENERAL INITIAL DATA
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+A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device
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+On Maxwellian equilibria of insulated semiconductors
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+On singular limits of mean-field equations.
@@ Property / cites work: On singular limits of mean-field equations. / rank @@
+Normal rank
@@ Property / cites work @@
+Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile
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@@ links / mardi / name / links / mardi / name @@
+Publication:2519323