Monte Carlo evaluation of the transport coefficients in a n<sup>+</sup> – n – n<sup>+</sup> silicon diode (Q4519080): Difference between revisions
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| Property / full work available at URL: https://doi.org/10.1108/03321640010334613 / rank | |||
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| Property / cites work: Extended thermodynamics tested beyond the linear regime: The case of electron transport in silicon semiconductors / rank | |||
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| Property / cites work: Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors / rank | |||
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| Property / cites work: Extended Hydrodynamical Model of Carrier Transport in Semiconductors / rank | |||
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Latest revision as of 09:46, 3 June 2024
scientific article; zbMATH DE number 1538420
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Monte Carlo evaluation of the transport coefficients in a n<sup>+</sup> – n – n<sup>+</sup> silicon diode |
scientific article; zbMATH DE number 1538420 |
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Monte Carlo evaluation of the transport coefficients in a n<sup>+</sup> – n – n<sup>+</sup> silicon diode (English)
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3 December 2000
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Boltzmann transport equation
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carrier transport
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semiconductor devices
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relaxation-time approximation
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moments expansion
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production terms
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Monte Carlo simulations
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silicon diode
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