A Finite Element Approximation Theory for the Drift Diffusion Semiconductor Model (Q5203634): Difference between revisions
From MaRDI portal
Created a new Item |
Set OpenAlex properties. |
||
(4 intermediate revisions by 3 users not shown) | |||
Property / author | |||
Property / author: Thomas Kerkhoven / rank | |||
Property / author | |||
Property / author: Thomas Kerkhoven / rank | |||
Normal rank | |||
Property / MaRDI profile type | |||
Property / MaRDI profile type: MaRDI publication profile / rank | |||
Normal rank | |||
Property / OpenAlex ID | |||
Property / OpenAlex ID: W2126264088 / rank | |||
Normal rank | |||
links / mardi / name | links / mardi / name | ||
Latest revision as of 19:47, 19 March 2024
scientific article; zbMATH DE number 4197347
Language | Label | Description | Also known as |
---|---|---|---|
English | A Finite Element Approximation Theory for the Drift Diffusion Semiconductor Model |
scientific article; zbMATH DE number 4197347 |
Statements
A Finite Element Approximation Theory for the Drift Diffusion Semiconductor Model (English)
0 references
1991
0 references
drift diffusion semiconductor model
0 references
finite element
0 references
convergence
0 references