Behavior of the potential at the pn-junction for a model in semiconductor theory (Q1173683): Difference between revisions
From MaRDI portal
Added link to MaRDI item. |
Removed claim: reviewed by (P1447): Item:Q380821 |
||
| Property / reviewed by | |||
| Property / reviewed by: Satyanad Kichenassamy / rank | |||
Revision as of 00:50, 14 February 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Behavior of the potential at the pn-junction for a model in semiconductor theory |
scientific article |
Statements
Behavior of the potential at the pn-junction for a model in semiconductor theory (English)
0 references
25 June 1992
0 references
The author studies the behavior of the second derivatives of the potential at the end-points of a pn-junction for a model of a semiconductor device. Typically, pure second order derivatives remain bounded, while mixed derivatives have a logarithmic singularity. Regarding the regularity at interior points of the junction, the author mentions a paper to appear in Ann. Mat. Pura Appl.
0 references
elliptic regularity
0 references
boundary behavior
0 references
