Instationary drift-diffusion problems with Gauss-Fermi statistics and field-dependent mobility for organic semiconductor devices (Q1999851): Difference between revisions

This paper deals with the analysis of a non-stationary drift-diffusion model for some organic semi-conductor devices; which is general enough to include Gauss-Fermi statistics. Firstly, the drift-diffusion modeling of an organic semi-conductor is defined. This model works via statistical relations between densities and chemical potential involving Gaussian disorder model. The analysis tool is based on the energy estimates for the weak solutions of the equation of the problem. The mathematical background is a Poisson equation for the electrostatic potential defined on the product of a time interval and a spatial domain.