A finite element method for the quantum hydrodynamic model for semiconductor devices (Q1912857): Difference between revisions
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Revision as of 11:01, 19 March 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | A finite element method for the quantum hydrodynamic model for semiconductor devices |
scientific article |
Statements
A finite element method for the quantum hydrodynamic model for semiconductor devices (English)
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22 May 1996
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A finite element method for numerical simulation of the transient quantum hydrodynamic model for semiconductor devices is presented. This model treats electron flow in a semiconductor device in the same manner as the classical hydrodynamic model, but the energy density and stress tensor include additional quantum terms, which allow particles to tunnel through potential barriers and to build up in potential wells. The finite element method under consideration is based on use of a mixed method for the approximation of the electric field and a shock-capturing Runge-Kutta discontinuous Galerkin method for the quantum hydrodynamic conservation laws.
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resonant tunneling diode
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hysteresis
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current-voltage curve
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mixed method
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shock-capturing Runge-Kutta discontinuous Galerkin method
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conservation laws
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