A coupled Schrödinger drift-diffusion model for quantum semiconductor device simulations (Q1851269): Difference between revisions

From MaRDI portal
Set OpenAlex properties.
ReferenceBot (talk | contribs)
Changed an Item
 
Property / cites work
 
Property / cites work: Erratum / rank
 
Normal rank
Property / cites work
 
Property / cites work: Diffusion Approximation and Computation of the Critical Size / rank
 
Normal rank
Property / cites work
 
Property / cites work: A hybrid kinetic-quantum model for stationary electron transport / rank
 
Normal rank
Property / cites work
 
Property / cites work: On a hierarchy of macroscopic models for semiconductors / rank
 
Normal rank
Property / cites work
 
Property / cites work: Coupling one-dimensional time-dependent classical and quantum transport models / rank
 
Normal rank
Property / cites work
 
Property / cites work: On a one-dimensional Schrödinger-Poisson scattering model / rank
 
Normal rank
Property / cites work
 
Property / cites work: Boundary layers and homogenization of transport processes / rank
 
Normal rank
Property / cites work
 
Property / cites work: Quantum hydrodynamic simulation of hysteresis in the resonant tunneling diode / rank
 
Normal rank
Property / cites work
 
Property / cites work: Mobility in High Electric Fields / rank
 
Normal rank
Property / cites work
 
Property / cites work: On the viscosity and thermal conduction of fluids with multivalued internal energy / rank
 
Normal rank
Property / cites work
 
Property / cites work: Existence of solutions and diffusion approximation for a model Fokker-Planck equation / rank
 
Normal rank
Property / cites work
 
Property / cites work: Macroscopic models for semiconductor heterostructures / rank
 
Normal rank
Property / cites work
 
Property / cites work: Knudsen layers from a computational viewpoint / rank
 
Normal rank
Property / cites work
 
Property / cites work: A numerical method for computing asymptotic states and outgoing distributions for kinetic linear half-space problems. / rank
 
Normal rank
Property / cites work
 
Property / cites work: Q4031474 / rank
 
Normal rank
Property / cites work
 
Property / cites work: Q4489937 / rank
 
Normal rank
Property / cites work
 
Property / cites work: Q4009097 / rank
 
Normal rank
Property / cites work
 
Property / cites work: SECOND ORDER BOUNDARY CONDITIONS FOR THE DRIFT-DIFFUSION EQUATIONS OF SEMICONDUCTORS / rank
 
Normal rank

Latest revision as of 18:20, 4 June 2024

scientific article
Language Label Description Also known as
English
A coupled Schrödinger drift-diffusion model for quantum semiconductor device simulations
scientific article

    Statements

    A coupled Schrödinger drift-diffusion model for quantum semiconductor device simulations (English)
    0 references
    0 references
    0 references
    16 December 2002
    0 references
    coupled Schrödinger drift-diffusion model
    0 references
    quantum semiconductor device simulations
    0 references
    resonant tunneling diode
    0 references

    Identifiers