2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods (Q2490272): Difference between revisions
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Latest revision as of 23:55, 18 December 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods |
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2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods (English)
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28 April 2006
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Weighted essentially non-oscillatory schemes
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Boltzmann transport equation
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Semiconductor device simulation
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MESFET
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MOSFET
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Direct Monte Carlo simulation
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