Structural stability of subsonic solutions to a steady hydrodynamic model for semiconductors: from the perspective of boundary data (Q6171336): Difference between revisions

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Property / cites work: On a one-dimensional steady-state hydrodynamic model for semiconductors / rank
 
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Property / cites work: Asymptotic stability of a stationary solution to a hydrodynamic model of semiconductors / rank
 
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Property / cites work: Steady Hydrodynamic Model of Semiconductors with Sonic Boundary: (I) Subsonic Doping Profile / rank
 
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Latest revision as of 13:44, 2 August 2024

scientific article; zbMATH DE number 7725775
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Structural stability of subsonic solutions to a steady hydrodynamic model for semiconductors: from the perspective of boundary data
scientific article; zbMATH DE number 7725775

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    Structural stability of subsonic solutions to a steady hydrodynamic model for semiconductors: from the perspective of boundary data (English)
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    11 August 2023
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    The paper deals with the one-dimensional isothermal steady hydrodynamic model (i.e., the current density and lattice temperature are assumed equal to \(1\) in the Euler-Poisson equations) \[ \begin{cases} \left( 1- \dfrac{1}{n^{2}} \right) n_{x} = nE - \dfrac{1}{\tau}, \\ \, E_{x} = n - b(x), \quad x\in(0,1) \end{cases} \] with sonic boundary conditions \(n(0) = n(1) = 1\). In the above system, \(n=n(x)\) denotes the electron density, \(E=E(x)\) the electric field, \(b=b(x)\) the doping profile, \(\tau>0\) the momentum relaxation time. The authors provide the existence, uniqueness and stability for solutions \((n,E)\) in the case of an approximate problem depending on a real parameter. The results are also confirmed by numerical simulations.
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    Euler-Poisson equations
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    sonic boundary
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    purely subsonic solutions
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    interior subsonic solutions
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