On the stationary quantum drift-diffusion model (Q1386188): Difference between revisions

M. G. Ancona is attributed with fathering a model system of equations describing the static distribution of electrons and holes in the vicinity of strong inversion layers in a semi-conductor. The purpose of this paper is to extend the analysis to bipolar devices taking generation-recombination processes into account. Existence of solutions is shown for the resulting strongly coupled, quasi-linear, elliptic system including the case of vanishing particle densities at the strong inversion layers by the use of variational arguments in conjunction with the Leray-Schauder fixed point theorem applied to a modified elliptic system (to cope with the non-uniform ellipticity resulting from the vanishing particle densities at the strong inversion layers). It is shown that vacuum can only occur at the boundary. In the case of non-vanishing boundary data, the semi-classical limit is investigated and convergence to solutions of the classical semi-conductor drift-diffusion equations is shown.