Behavior of the potential at the pn-junction for a model in semiconductor theory (Q1173683): Difference between revisions
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| English | Behavior of the potential at the pn-junction for a model in semiconductor theory |
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Behavior of the potential at the pn-junction for a model in semiconductor theory (English)
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25 June 1992
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The author studies the behavior of the second derivatives of the potential at the end-points of a pn-junction for a model of a semiconductor device. Typically, pure second order derivatives remain bounded, while mixed derivatives have a logarithmic singularity. Regarding the regularity at interior points of the junction, the author mentions a paper to appear in Ann. Mat. Pura Appl.
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elliptic regularity
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boundary behavior
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