GLOBAL EXISTENCE AND ASYMPTOTIC BEHAVIOR FOR A SEMICONDUCTOR DRIFT-DIFFUSION-POISSON MODEL (Q3521666): Difference between revisions
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Revision as of 23:54, 14 February 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | GLOBAL EXISTENCE AND ASYMPTOTIC BEHAVIOR FOR A SEMICONDUCTOR DRIFT-DIFFUSION-POISSON MODEL |
scientific article |
Statements
GLOBAL EXISTENCE AND ASYMPTOTIC BEHAVIOR FOR A SEMICONDUCTOR DRIFT-DIFFUSION-POISSON MODEL (English)
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26 August 2008
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3D whole-space case
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elliptic-parabolic system
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weak solution
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unique equilibrium
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recombination-generation rate
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