Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver (Q3156132): Difference between revisions
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Revision as of 03:16, 15 February 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver |
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Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver (English)
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6 January 2005
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Electronic engineering
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Monte Carlo simulation
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Semiconductor devices
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Silicon
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