A finite-volume scheme for a spinorial matrix drift-diffusion model for semiconductors (Q2808864): Difference between revisions
From MaRDI portal
Set OpenAlex properties. |
Changed an Item |
||
| Property / arXiv ID | |||
| Property / arXiv ID: 1502.05639 / rank | |||
Normal rank | |||
Revision as of 08:34, 19 April 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | A finite-volume scheme for a spinorial matrix drift-diffusion model for semiconductors |
scientific article |
Statements
A finite-volume scheme for a spinorial matrix drift-diffusion model for semiconductors (English)
0 references
25 May 2016
0 references
energy dissipation
0 references
field-effect transistor
0 references
finite volumes
0 references
semiconductors
0 references
spinor drift-diffusion equations
0 references
