A domain decomposition method for silicon devices (Q2721311): Difference between revisions

@@ Property / cites work @@
+High field approximations to a Boltzmann-Poisson system and boundary conditions in a semiconductor
+Normal rank
@@ Property / cites work @@
+Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices
+Normal rank
@@ Property / cites work @@
+Conditions for runaway phenomena in the kinetic theory of particle swarms
+Normal rank
@@ Property / cites work @@
+Efficient implementation of weighted ENO schemes
@@ Property / cites work: Efficient implementation of weighted ENO schemes / rank @@
+Normal rank
@@ Property / cites work @@
+Runaway Phenomena and Fluid Approximation Under High Fields in Semiconductor Kinetic Theory
+Normal rank
@@ Property / cites work @@
+Derivation of a hydrodynamic system hierarchy for semiconductors from the Boltzmann equation
+Normal rank
@@ Property / cites work @@
+Efficient implementation of essentially nonoscillatory shock-capturing schemes. II
+Normal rank