2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods (Q2490272): Difference between revisions

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Revision as of 12:38, 24 June 2024

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2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods
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    2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods (English)
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    28 April 2006
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    Weighted essentially non-oscillatory schemes
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    Boltzmann transport equation
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    Semiconductor device simulation
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    MESFET
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    MOSFET
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    Direct Monte Carlo simulation
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