The effect of uniaxial stress on band structure and electron mobility of silicon (Q1010026): Difference between revisions
From MaRDI portal
Created claim: Wikidata QID (P12): Q62600255, #quickstatements; #temporary_batch_1719386330764 |
ReferenceBot (talk | contribs) Changed an Item |
||
| Property / cites work | |||
| Property / cites work: Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering / rank | |||
Normal rank | |||
| Property / cites work | |||
| Property / cites work: Deformation Potentials in Silicon. I. Uniaxial Strain / rank | |||
Normal rank | |||
Revision as of 10:26, 1 July 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | The effect of uniaxial stress on band structure and electron mobility of silicon |
scientific article |
Statements
The effect of uniaxial stress on band structure and electron mobility of silicon (English)
0 references
3 April 2009
0 references
band structure
0 references
empirical pseudopotential method
0 references
uniaxial strain/stress
0 references
Monte Carlo method
0 references
low-field mobility
0 references
