Relaxation-time limit of the three-dimensional hydrodynamic model with boundary effects (Q3011578): Difference between revisions

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+The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations
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+THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
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+Weak solutions to a hydrodynamic model for semiconductors and relaxation to the drift-diffusion equation
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+The bipolar hydrodynamic model for semiconductors and the drift-diffusion equations
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+A hierarchy of hydrodynamic models for plasmas zero-relaxation-time limits
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+Zero-relaxation-time limits in the hydrodynamic equations for plasmas revisited
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+Relaxation of the isothermal Euler-Poisson system to the drift-diffusion equations
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+The energy transport and the drift diffusion equations as relaxation limits of the hydrodynamic model for semiconductors
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+The relaxation to the drift-diffusion system for the 3-D isentropic Euler-Poisson model for semiconductors
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+ON THE 3-D BIPOLAR ISENTROPIC EULER–POISSON MODEL FOR SEMICONDUCTORS AND THE DRIFT-DIFFUSION LIMIT
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+Diffusion relaxation limit of a bipolar hydrodynamic model for semiconductors
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+Diffusive Relaxation Limit of Multidimensional Isentropic Hydrodynamical Models for Semiconductors
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+Global Existence and Relaxation Limit for Smooth Solutions to the Euler--Poisson Model for Semiconductors
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+Global smooth solutions to the multi-dimensional hydrodynamic model for two-carrier plasmas
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+The asymptotic behavior of globally smooth solutions of the multidimensional isentropic hydrodynamic model for semiconductors.
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+Global existence and asymptotic behavior for a multidimensional nonisentropic hydrodynamic semiconductor model with the heat source
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+Asymptotics of initial boundary value problems for hydrodynamic and drift diffusion models for semiconductors
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