The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations (Q1584728)
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scientific article; zbMATH DE number 1525500
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| English | The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations |
scientific article; zbMATH DE number 1525500 |
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The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations (English)
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7 August 2001
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The authors establish the convergence and consistency of approximate solutions derived by the modified Godunov scheme for the initial-boundary value problem corresponding to a simplified one-dimemsional hydrodynamic model for semiconductors using the compensated compactness method. The trace of weak solutions is introduced, and then the weak solutions are proved to satisfy the natural boundary conditions. The zero relaxation limit of the hydrodynamic model to the drift-diffusion model is proved when the momentum relaxation time tends to zero. Reviewer's remark: The paper contains substantial results in the theory of electromagnetism and optics.
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hydrodynamic model
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global weak solution
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semiconductors
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zero relaxation limit
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drift-diffusion model
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0.8349514603614807
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0.8275291323661804
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0.8273155093193054
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0.8262626528739929
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