Electron transport in silicon nanowires having different cross-sections (Q325586): Difference between revisions

One investigates the transport properties of some nanowires, taking into account the shape of their cross-section. One considers more especially square and equilateral triangle cross-sections. The transport equations are defined and then, using the maximum entropy principle, the authors derive an extended hydrodynamic model, and lastly the electron mobility is carefully analyzed.

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zbMATH Keywords

quantum wires

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semiconductors

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kinetic theory of gases

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reviewed by

Guy Jumaric

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MaRDI profile type

MaRDI publication profile

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full work available at URL

https://doi.org/10.1515/caim-2016-0003

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cites work

Numerical study of the systematic error in Monte Carlo schemes for semiconductors

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Properties of the steady state distribution of electrons in semiconductors

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A variance-reduced electrothermal Monte Carlo method for semiconductor device simulation

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Seebeck effect in silicon semiconductors

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Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire

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Effect of size distribution on the optical properties of quantum wire systems

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Q2725515

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Hydrodynamic modeling of the electro-thermal transport in silicon semiconductors

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An energy transport model describing heat generation and conduction in silicon semiconductors

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Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations

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A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle

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Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle

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Solution of the Schrödinger equation for a particle in an equilateral triangle

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Identifiers

zbMATH Open document ID

1354.82033

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DOI

10.1515/caim-2016-0003

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Mathematics Subject Classification ID

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Sitelinks

Mathematics(1 entry)

mardi Publication:325586

@@ Property / cites work @@
+Numerical study of the systematic error in Monte Carlo schemes for semiconductors
+Normal rank
@@ Property / cites work @@
+Properties of the steady state distribution of electrons in semiconductors
+Normal rank
@@ Property / cites work @@
+A variance-reduced electrothermal Monte Carlo method for semiconductor device simulation
+Normal rank
@@ Property / cites work @@
+Seebeck effect in silicon semiconductors
@@ Property / cites work: Seebeck effect in silicon semiconductors / rank @@
+Normal rank
@@ Property / cites work @@
+Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire
+Normal rank
@@ Property / cites work @@
+Effect of size distribution on the optical properties of quantum wire systems
+Normal rank
@@ Property / cites work @@
+Q2725515
@@ Property / cites work: Q2725515 / rank @@
+Normal rank
@@ Property / cites work @@
+Hydrodynamic modeling of the electro-thermal transport in silicon semiconductors
+Normal rank
@@ Property / cites work @@
+An energy transport model describing heat generation and conduction in silicon semiconductors
+Normal rank
@@ Property / cites work @@
+Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations
+Normal rank
@@ Property / cites work @@
+A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle
+Normal rank
@@ Property / cites work @@
+Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
+Normal rank
@@ Property / cites work @@
+Solution of the Schrödinger equation for a particle in an equilateral triangle
+Normal rank