Radial oscillations of an elastic semiconductor (Q581110): Difference between revisions

Research papers have been published [e.g. (*) \textit{B. Maruszewski} and \textit{G. Lebon}, ibid. 24, 583-593 (1986; Zbl 0577.73111)] recently on phenomenological theories of elastic semiconductors. Thinking of some specific application of (*) to acousto electronics, we consider the radial oscillations of a cylindrical tube, under an applied traction on its inner and outer surfaces which are carrying charges and are maintained at constant temperature, the relaxation times and coupling coefficients having been neglected. The material of the tube is taken to be a deformable, transversely isotropic, heat conducting and polarized semiconductor in the presense of an electric field. We look for the interaction of mechanical, thermal and electric fields in the tube. Stress distribution, the velocity and acceleration of the oscillation, temperature field, free electrons and hole charge distribution, the electric intensity distribution at any point inside the tube are determined. That one of the shear stresses, when compared with the purely elastic solutions, no longer vanishes is due to the interaction of the various fields. Oscillations are, on the whole, damped.