Phenomenological theory of elastic semiconductors (Q1072795)

The paper aims at constructing a consistent, fully nonlinear phenomenological theory of elastic semi-conductors and then deducing from it coupled electro-magneto-acoustic equations which can be useful in studying various types of wave-propagation problems in the presence of bias fields. In a first step, the authors use the so-called principle of virtual powers and the two principles of thermodynamics for a body as a whole, together with the usual Maxwell equations, to construct a general phenomenological theory of elastic semi-conductors that is rotationally invariant and thermodynamically admissible. This theory involves finite strains and electromagnetic fields of finite magnitude, a fact that allows to take into account any contribution of the initial bias fields to the perturbation equations used in acousto-electronic problems. Moreover, the theory is simple in that it involves only one new independent variable - the net carrier density - as compared to the usual models of deformable magnetizable and electrically polarizable media. Nonlinear representations are obtained for all effects of importance in elastic semi-conductors, e.g. elasticity, electromechanical couplings, galvanomagnetic, thermoelectric and thermomagnetic effects, elasto- and magnetoresistance. In particular, generalized Ohm and Fourier laws are obtained, in which gradients of the chemical potential associated with charge carriers and the conduction current play a crucial role. In a second step, perturbation bulk and surface equations about a bias state are deduced, that may be used to treat any kind of bulk and surface wave-interaction problems. These equations involve the influence of the initial electric and magnetic fields in stiffening the material coefficients, breaking the initial (before the application of bias fields) material symmetry of the medium and allowing for further electromechanical couplings.