Singular Perturbations and a Free Boundary Problem in the Modeling of Field-Effect Transistors

DOI10.1137/0152007zbMath0753.35112OpenAlexW2026697151MaRDI QIDQ3989027

Michael J. Ward

Publication date: 28 June 1992

Published in: SIAM Journal on Applied Mathematics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1137/0152007

zbMATH Keywords

semiconductor equationsuniform expansionscurrent-voltage relationsburied-channel field-effect transistorslarge doping densities

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Singular perturbations in context of PDEs (35B25) Asymptotic approximations, asymptotic expansions (steepest descent, etc.) (41A60) Technical applications of optics and electromagnetic theory (78A55) Free boundary problems for PDEs (35R35)

Related Items (4)

Approximate solutions to the quantum drift-diffusion model of semiconductors ⋮ A direct approach to solving the drift-diffusion model equations for use in certain MOSFET devices ⋮ Boundary layer analysis in the semiclassical limit of a quantum drift-diffusion model ⋮ Current/Voltage Characteristics of the Short-Channel Double-Gate Transistor. Part I

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