Current/voltage characteristics of the short-channel double-gate transistor. I
DOI10.1137/17M1121123zbMATH Open1392.82060WikidataQ130052677 ScholiaQ130052677MaRDI QIDQ4609599FDOQ4609599
Authors: Ellis Cumberbatch, Stefan G. Llewellyn Smith 
Publication date: 5 April 2018
Published in: SIAM Journal on Applied Mathematics (Search for Journal in Brave)
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Asymptotic behavior of solutions to PDEs (35B40) Second-order elliptic systems (35J47) PDEs in connection with optics and electromagnetic theory (35Q60) Motion of charged particles (78A35) Statistical mechanics of solids (82D20) Statistical mechanics of semiconductors (82D37)
Cites Work
- NIST handbook of mathematical functions
- On the Lambert \(w\) function
- Singular perturbation methods for ordinary differential equations
- Multiple scale and singular perturbation methods
- Title not available (Why is that?)
- Asymptotic Methods for Metal Oxide Semiconductor Field Effect Transistor Modeling
- Singular Perturbations and a Free Boundary Problem in the Modeling of Field-Effect Transistors
- Current-voltage characteristics from an asymptotic analysis of the MOSFET equations
- Singular perturbation theory
Cited In (8)
- Analytic transient solution of SCFL logic gates
- A new approach to numerical simulation of charge transport in double gate-MOSFET
- A compact model for the \(I\)-\(V\) characteristics of an undoped double-gate MOSFET
- Current-voltage characteristics from an asymptotic analysis of the MOSFET equations
- Analytical solution of nonlinear Poisson equation for symmetric double-gate metal-oxide-semiconductor field effect transistors
- An analytical subthreshold current model for ballistic quantum-wire double-gate MOS transistors
- Simulation of the hot-carrier degradation in short channel transistors with high-k dielectric
- A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs
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