Current/Voltage Characteristics of the Short-Channel Double-Gate Transistor. Part I

DOI10.1137/17M1121123zbMath1392.82060MaRDI QIDQ4609599

Ellis Cumberbatch, Stefan G. Llewellyn Smith

Publication date: 5 April 2018

Published in: SIAM Journal on Applied Mathematics (Search for Journal in Brave)

zbMATH Keywords

asymptotic analysis; MOSFET; current-voltage relation; double gate transistor

Mathematics Subject Classification ID

35B40: Asymptotic behavior of solutions to PDEs

35Q60: PDEs in connection with optics and electromagnetic theory

82D37: Statistical mechanics of semiconductors

82D20: Statistical mechanics of solids

78A35: Motion of charged particles

35J47: Second-order elliptic systems

Uses Software

• DLMF