Current/voltage characteristics of the short-channel double-gate transistor. I
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Publication:4609599
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Cites work
- scientific article; zbMATH DE number 1818854 (Why is no real title available?)
- Asymptotic Methods for Metal Oxide Semiconductor Field Effect Transistor Modeling
- Current-voltage characteristics from an asymptotic analysis of the MOSFET equations
- Multiple scale and singular perturbation methods
- NIST handbook of mathematical functions
- On the Lambert \(w\) function
- Singular Perturbations and a Free Boundary Problem in the Modeling of Field-Effect Transistors
- Singular perturbation methods for ordinary differential equations
- Singular perturbation theory
Cited in
(8)- Analytic transient solution of SCFL logic gates
- A new approach to numerical simulation of charge transport in double gate-MOSFET
- A compact model for the I-V characteristics of an undoped double-gate MOSFET
- Analytical solution of nonlinear Poisson equation for symmetric double-gate metal-oxide-semiconductor field effect transistors
- Current-voltage characteristics from an asymptotic analysis of the MOSFET equations
- An analytical subthreshold current model for ballistic quantum-wire double-gate MOS transistors
- Simulation of the hot-carrier degradation in short channel transistors with high-k dielectric
- A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs
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