Asymptotic Methods for Metal Oxide Semiconductor Field Effect Transistor Modeling
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Publication:3488579
DOI10.1137/0150066zbMath0707.35130OpenAlexW2161109977MaRDI QIDQ3488579
F. M. Odeh, Michael J. Ward, Donald S. Cohen
Publication date: 1990
Published in: SIAM Journal on Applied Mathematics (Search for Journal in Brave)
Full work available at URL: https://authors.library.caltech.edu/31400/
Asymptotic behavior of solutions to PDEs (35B40) Singular perturbations in context of PDEs (35B25) PDEs in connection with quantum mechanics (35Q40)
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Approximate solutions to the quantum drift-diffusion model of semiconductors ⋮ A direct approach to solving the drift-diffusion model equations for use in certain MOSFET devices ⋮ Boundary layer analysis in the semiclassical limit of a quantum drift-diffusion model ⋮ Current/Voltage Characteristics of the Short-Channel Double-Gate Transistor. Part I ⋮ A compact quantum surface potential model for a MOSFET device ⋮ A compact model for the \(I\)-\(V\) characteristics of an undoped double-gate MOSFET ⋮ Two-Dimensional Modeling of Electron Flow Through a Poorly Conducting Layer
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