A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs

DOI10.1080/08927020802609454MaRDI QIDQ3394237zbMATH OpenOpenAlexWikidataFDO

Authors Jin He, Lining Zhang, Rui Zheng, Jian Zhang, M. S. Chan

Publication date 28 August 2009

Published in Molecular Simulation (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1080/08927020802609454

zbMATH Keywords

compact modellingdevice physicsDG-MOSFETsnon-classical CMOSsurface potentialULSI circuit simulation

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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