Simulation of the hot-carrier degradation in short channel transistors with high-k dielectric

DOI10.1002/JNM.750zbMATH Open1197.78043OpenAlexW4244807109MaRDI QIDQ3585578FDOQ3585578

Authors:

Publication date: 20 August 2010

Published in: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/jnm.750

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zbMATH Keywords

reliabilityhigh-khot-carrier degradationshort channel devices

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Experimental work for problems pertaining to optics and electromagnetic theory (78-05)

Cited In (1)

• The role of the boundary conditions on the current degradation in FD-SOI devices

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