Efficient solution of the Schrödinger-Poisson equations in layered semiconductor devices

DOI10.1016/j.jcp.2009.03.037zbMath1169.82020OpenAlexW2038376011MaRDI QIDQ2390425

Christopher R. Anderson

Publication date: 22 July 2009

Published in: Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.jcp.2009.03.037

zbMATH Keywords

electronic structurequantum dotsSchrödinger-Poissoncomputational nano-technology

Mathematics Subject Classification ID

Schrödinger operator, Schrödinger equation (35J10) Statistical mechanics of semiconductors (82D37) Multistep, Runge-Kutta and extrapolation methods for ordinary differential equations (65L06) Finite difference methods for boundary value problems involving PDEs (65N06)

Related Items (5)

A Rayleigh-Chebyshev procedure for finding the smallest eigenvalues and associated eigenvectors of large sparse Hermitian matrices ⋮ Isospectral measures ⋮ A discrete geometric approach to solving time independent Schrödinger equation ⋮ Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices ⋮ Complementary geometric formulations for electrostatics

Uses Software

• LAPACK
• FFTW

Cites Work

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• Self-consistent-field calculations using Chebyshev-filtered subspace iteration
• State-of-the-art eigensolvers for electronic structure calculations of large scale nano-systems
• A Fourier--Wachspress method for solving Helmholtz's equation in three-dimensional layered domains
• LAPACK Users' Guide
• Modeling, Design, and Optimization of a Solid State Electron Spin Qubit

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